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最近上架的文档

SSE-1962-vol.5-an investigationof surface states at a siliconsilicon oxide interface employingmetal-oxide-silicon diode 15 p
SSE-1962-vol.5-an investigationof surface states at a siliconsilicon oxide interface employingmetal-oxide-silicon diode
JApplPhys_97_094503Theory of the GaN crystal diode Negative mass negative differential resistance 6 p
JApplPhys_97_094503Theory of the GaN crystal diode Negative mass negative differential resistance
JApplPhys_97_093715Modeling of electron mobility in GaN materials 6 p
JApplPhys_97_093715Modeling of electron mobility in GaN materials
JApplPhys_97_063705Bulk GaN and AlGaN GaN heterostructure drift velocity measurements and comparison to theoretical models 5 p
JApplPhys_97_063705Bulk GaN and AlGaN GaN heterostructure drift velocity measurements and comparison to theoretical models
JApplPhys_96_1499Hot-phonon-induced velocity saturation in GaN 4 p
JApplPhys_96_1499Hot-phonon-induced velocity saturation in GaN
JApplPhys_95_4914Hole mobility in zincblende c–GaN 4 p
JApplPhys_95_4914Hole mobility in zincblende c–GaN
JApplPhys_94_2498Design of high electron mobility devices with composite nitride channels 9 p
JApplPhys_94_2498Design of high electron mobility devices with composite nitride channels
JApplPhys_94_1819Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes 4 p
JApplPhys_94_1819Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes
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