Properties of Indium-Tin-Oxide (ITO) Films Deposited by a Facing Target Sputtering

A facing target sputtering piece of equipment was assembled to form ITO films and compare the features with those ITO films deposited using low-voltage sputtering techniques (e.g. parallel plate magnetron sputtering). The ITO films formed using the former technique showed minimum resistance at higher oxygen partial pressure regions and exhibited generally higher res..