Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors.[2017][ACS Appl Mater Inter
本文档由 路路通 分享于2017-03-16 19:11
Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors.[2017][ACS Appl Mater Inter
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君,已阅读到文档的结尾了呢~~