Microscopic origin of magnetoresistance-material today
本文档由 tyt520love 分享于2011-06-15 20:12
Tunneling magnetoresistance is one of the basic effects of spintronicswith the potential for applications in sensors and IT, where the spindegree of freedom of electrons is exploited. Successful applicationrequires control of the materials and processes involved on the atomicscale. To support experimental developments, predict new materials, andoptimize the effect, first-principle..
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君,已阅读到文档的结尾了呢~~