Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
本文档由 wang5945 分享于2010-11-21 19:44
The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH3 in carrierhydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 n·cm. A model showing nitrogenincorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermalannealing.
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君，已阅读到文档的结尾了呢~~