Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition

The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH3 in carrierhydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 n·cm. A model showing nitrogenincorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermalannealing.