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Transport and Deposition of Particles in Turbulent and Laminar Flowannurev[1].fluid.40.111406.102220.pdf
- Transport and Deposition of Particles in Turbulent and Laminar Flowannurev[1].fluid.40.111406.102220Transport and Deposition of Particles in Turbulent and Laminar Flowannurev[1].fluid.40.111406.102220Transport and Deposition of Particles in Turbulent and Laminar Flowannurev[1].fluid.40.111406.102220
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Porous TiO2 hollow spheres by liquid phase deposition on polystyrene latex-stabilised Pickering emulsions.pdf
- Porous TiO2 hollow spheres by liquid phase deposition on polystyrene latex-stabilised Pickering emulsions
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Microcrystalline thin-film solar cell deposition on moving substrates using a linear VHF-PECVD.pdf
- Microcrystallinethin-film solar cell deposition movingsubstrates using linearVHF-PECVD reactor cross
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BULK HYDROGENATION IN MC-SI BY PECVD SINX DEPOSITION USING DIRECT AND REMOTE PLASMA.pdf
- Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition atlow temperatures, so without a subsequent firing step. In a recent publication we have shown that bulk lifetimeimprovement in mc-Si takes place during PECVD SiNx deposition at 450°C in a PECVD furnace with direct plasmaand low plasma generator frequency. In this work we study the bulk hydrogenation of mc-Si after SiNx deposition indifferent PECVD systems with direct and remote plasma. Tests were performed on p-type and n-type wafers frommc-Si ingots, p-type String Ribbon wafers and p-type EFG ribbon wafers. Neighbouring and adjacent wafersrespectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown andafter P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was provided withan iodine-ethanol solution. Significant bulk lifetime improvement in mc-Si takes place during SiNx deposition at lowtempe
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Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique.pdf
- During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to
future thin-film silicon solar cell processing and design:
(1) In 1987, IMT introduced the so-called ‘‘very high frequency glow discharge (VHF-GD)’’ technique, a method
that leads to a considerable enhancement in the deposition rate of amorphous and microcrystalline silicon layers. As
a direct consequence of reduced plasma impedances at higher plasma excitation frequencies, silane dissociation is
enhanced and the maximum energy of ions bombarding the growing surface is reduced. Due to softer ion bombardment
on the growing surface, the VHF process also favours the formation of microcrystalline silicon. Based on these beneficial
properties of VHF plasmas, for the growth of thin silicon films, plasma excitation frequencies fexc in the range
30–300MHz, i.e. clearly higher than the standard 13.56MHz, are indeed scheduled to play an important role in future
production equi
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Islet amyloid deposition limits the viability of human islet grafts but not porcine islet gra.pdf
- Isletamyloid deposition limits humanisletgrafts porcineislet graftsK. J. Pottera,1, A. Abedinib,1, P
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deposition aided chemical vapor deposition a pvd aided cvd process for depositing nitrogenatoms mixed in carbon diamond-like-structure is investigated and one such layer is formed with this method.pdf
- PlasmaVapor Deposition Aided Chemical Vapor Deposition PVDaided CVD process depositingNitrogen atoms
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9 Principles of Vapor Deposition of Thin Films First Edition-Nucleation and Growth of Films.pdf
- Principles of Vapor Deposition of Thin Films First Edition-Nucleation and Growth of Films
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向豆丁求助：有没有vad deposition?
