-
11
-
Defect pool in amorphous-silicon thin-film transistors PhysRevB 45 4160.pdf
- Defect pool in amorphous-silicon thin-film transistors PhysRevB 45 4160Defect pool in amorphous-silicon thin-film transistors PhysRevB 45 4160Defect pool in amorphous-silicon thin-film transistors PhysRevB 45 4160
-
-
12
-
PhysRevB_70_205320[2].pdfSingle-qubit gates and measurements in the surfaceacoustic wave quantum computer 1.pdf
- PhysRevB_70_205320[2].pdfSingle-qubit gates and measurements in the surfaceacoustic wave quantum computer 1
-
-
4
-
PhysRevB_75_121403(2007)Topological aspects of the quantum spin-Hall effect in graphene--Z2 topological order and spin Chern number.pdf
- PhysRevB_75_121403(2007)Topological aspects of the quantum spin-Hall effect in graphene--Z2 topological order and spin Chern numberPhysRevB_75_121403(2007)Topological aspects of the quantum spin-Hall effect in graphene--Z2 topological order and spin Chern numberPhysRevB_75_121403(2007)Topological aspects of the quantum spin-Hall effect in graphene--Z2 topological order and spin Chern number
-
-
17
-
PhysRevB_75_045315(2007)Anomalous Hall effect in a two-dimensional Dirac band--The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approach.pdf
- PhysRevB_75_045315(2007)Anomalous Hall effect in a two-dimensional Dirac band--The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approachPhysRevB_75_045315(2007)Anomalous Hall effect in a two-dimensional Dirac band--The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approachPhysRevB_75_045315(2007)Anomalous Hall effect in a two-dimensional Dirac band--The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approach
-
-
14
-
PhysRevB铜铟硒.pdf
- 薄膜太阳电池
-
-
15
-
The hydrogen collision model Quantitative description of metastability in amorphous silicon_PhysRevB 59 5498.pdf
- The hydrogen collision model Quantitative description of metastability in amorphous silicon_PhysRevB 59 5498The hydrogen collision model Quantitative description of metastability in amorphous silicon_PhysRevB 59 5498The hydrogen collision model Quantitative description of metastability in amorphous silicon_PhysRevB 59 5498
-
-
12
-
Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon PhysRevB 53 10121.pdf
- Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon PhysRevB 53 10121Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon PhysRevB 53 10121Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon PhysRevB 53 10121
-
-
4
-
PhysRevB_74_172305(2006)Unified description of Zitterbewegung for spintronic, graphene, and superconducting systems.pdf
- PhysRevB_74_172305(2006)Unified description of Zitterbewegung for spintronic, graphene, and superconducting systemsPhysRevB_74_172305(2006)Unified description of Zitterbewegung for spintronic, graphene, and superconducting systemsPhysRevB_74_172305(2006)Unified description of Zitterbewegung for spintronic, graphene, and superconducting systems
-
-
4
-
(打印)PhysRevB_77_113312 Polarization fields in (Zn,Cd)O ZnO quantum well structures.pdf
- (打印)PhysRevB_77_113312 Polarization fields in (Zn,Cd)O ZnO quantum well structures
-
-
6
-
1986-PhysRevB[1].33.3952-Carrier transport through grain boundaries in semiconductors.pdf
- 1986-PhysRevB[1].33.3952-Carrier transport through grain boundaries in semiconductors
-
向豆丁求助:有没有physrevb?